By Leonard J. Brillson

ISBN-10: 111902711X

ISBN-13: 9781119027119

ISBN-10: 1119027128

ISBN-13: 9781119027126

ISBN-10: 1119027136

ISBN-13: 9781119027133

ISBN-10: 1119027144

ISBN-13: 9781119027140

"An crucial advisor to digital fabric Surfaces and Interfaces is a streamlined but finished creation that covers the fundamental actual houses of digital fabrics, the experimental options used to degree them, and the theoretical tools used to appreciate, expect, and layout them. beginning with the elemental digital homes of semiconductors and electric measurements of Read more...

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a vital consultant to digital fabric Surfaces and Interfaces is a streamlined but complete advent that covers the elemental actual houses of digital fabrics, the experimental Read more...

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Extra resources for An essential guide to electronic material surfaces and interfaces

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4 × 1013 F−2 V−1 . (a) Determine the semiconductor doping. (b) If C = 168 nF at V = 0, what is the band bending qV0 ? 10. 8 show a decrease in the metal–Si barrier height with increasing reverse bias. 825 eV, calculate the maximum electric fields −qND d∕???? at the interface for 0 and 2 V reverse bias. 5 × 1010 cm−3 for the intrinsic carrier concentration. What image force dielectric constant is consistent with the barrier height change? 11. 6 showing the first transistor, speculate on how the inventors achieved low resistance contacts.

8b shows photo-induced excitation of transitions from the Fermi level of the metal to the conduction band edge (1) as well as band-to-band transitions (2). Light passing through the semiconductor with energy h???? ≥ EG (≡ EC − EV ) will be strongly attenuated by absorption before it reaches the metal–semiconductor interface. The free carriers so generated lie in a field-free region, recombine and do not contribute to the photoresponse. Hence the technique requires either: (a) that the metal film be thin enough for front illumination to be absorbed at the metal–semiconductor interface or (b) back illumination through the semiconductor.

The following chapters describe the various techniques used to study electronic material surfaces and interfaces. The final chapters describe the most important properties of electronic material surfaces, heterojunctions, and metal–semiconductor interfaces discovered over several decades of research, ending with the new frontiers of electronic materials surface and interface research. 7 Problems 1. Explain why Ge was the first semiconductor considered for a transistor rather than Si. Hint: Use Appendix D: Semiconductor Properties.

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An essential guide to electronic material surfaces and interfaces by Leonard J. Brillson


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